Authors: Thahe A.A., Bidin N., Hassan Z., Bakhtiar H., Qaeed M.A., Bououdina M., Ahmed N.M., Talib Z.A., Al-Azawi M.A., Alqaraghuli H., Uday M.B., Ahmed O.H.
Author Affiliations: Thahe, A.A., Faculty of Science, Physics Department, Universiti Teknologi Malaysia, Johor Bahru, 81310, Malaysia, Laser Center, Institute Ibnu Sina, Universiti Teknologi Malaysia, Skudai, Johor, 81310, Malaysia; Bidin, N., Laser Center, Institute Ibnu Sina, Universiti Teknologi Malaysia, Skudai, Johor, 81310, Malaysia; Hassan, Z., Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, USM, Penang, 11800, Malaysia; Bakhtiar, H., Faculty of Science, Physics Department, Universiti Teknologi Malaysia, Johor Bahru, 81310, Malaysia; Qaeed, M.A., Faculty of Education, Physics Department, Hodeidah University, Al Hodeidah, Yemen; Bououdina, M., Department of Physics, College of Science, University of Bahrain, PO Box 32038, Manama, Bahrain; Ahmed, N.M., Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, USM, Penang, 11800, Malaysia; Talib, Z.A., Faculty of Science, Department of Physics, Universiti Putra Malaysia (UPM), Serdang, Selangor, 43400, Malaysia; Al-Azawi, M.A., Faculty of Science, Physics Department, Universiti Teknologi Malaysia, Johor Bahru, 81310, Malaysia; Alqaraghuli, H., Faculty of Electrical Engineering, Mechatronics and Automatic Control Department, Universiti Technology Malaysia, Johor Bahru, 81310, Malaysia; Uday, M.B., UTM, Centre for Low Carbon Transport in Cooperation, Imperial Collage London, Institutefor Vehicle Systems and Engineering, University Teknologi Malaysia, UTM Skudai, Johor, 81310, Malaysia; Ahmed, O.H., Faculty of Science, Physics Department, Universiti Teknologi Malaysia, Johor Bahru, 81310, Malaysia
Publication Date: 2017
Nanoporous silicon (n-PSi) with diverse morphologies was prepared on silicon (Si) substrate via photo-electrochemical etching technique. The role of changing current density (15, 30 and 45 mA cm-2) on the structure, morphology and optical properties was determined. As-prepared samples were systematically characterized using XRD, FESEM, AFM and photoluminescence measurements. Furthermore, the achieved n-PSi sample was used to make metal-semiconductor-metal (MSM) UV photodetector. The performance of these photodetectors was evaluated upon exposing to visible light of wavelength 530 nm (power density 1.55 mW cm-2), which exhibited very high sensitivity of 150.26 with a low dark current. The achieved internal photoconductive gain was 2.50, the photoresponse peak was 1.23 A W-1 and the response time was 0.49 s and the recovery time was 0.47 s. Excellent attributes of the fabricated photodetectors suggest that the present approach may provide a cost effective and simple way to obtain n-PSi suitable for sundry applications. © 2017 IOP Publishing Ltd.
Eshan2020-11-28T18:54:34+00:00
