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A novel, flexible, and low-cost infrared (IR) SnS photodetector was fabricated onto a polyethylene terephthalate (PET) substrate by a simple approach based on chemical bath deposition. X-ray diffraction analysis confirmed an orthorhombic structure, scanning electron microscopy observations revealed flower-like morphology, and UV-vis spectroscopy indicated a direct energy gap of 1.42 eV. The photodetector exhibited maximum responsivity at 850 nm under the illumination of a Hg (Xe) lamp. The photoresponse properties of the photodetector were determined under illumination of 850 nm at various bias voltages (3, 5 and 7 V). The photodetector manifested good sensitivity, excellent reproducibility and fast response time. Both rise/decay times measured at bias voltage of 3 V were determined: τ rise = 0.38 s and τ decay = 0.67 s. Additionally, the photoresponse versus different power density of illumination was also measured. The as-obtained results, highlighted that the newly fabricated SnS photodetector can be considered as a promising photoelectronic device that can be effectively used in the IR region due to its excellent photoresponce characteristics, low cost, flexibility, and non-toxicity. © 2017 IOP Publishing Ltd.
