Authors: Abdullah Q.N., Ahmed A.R., Ali A.M., Yam F.K., Hassan Z., Bououdina M., Almessiere M.A.
Author Affiliations: Abdullah, Q.N., Nano-Optoelectronics Research and Technology Laboratory, School of Physics, University Sains Malaysia, USMPenang 11800, Malaysia, Physics Department, Collage of Education for Pure Science, Tikrit University, Iraq; Ahmed, A.R., Physics Department, Collage of Education for Pure Science, Tikrit University, Iraq; Ali, A.M., Physics Department, Collage of Education for Pure Science, Tikrit University, Iraq; Yam, F.K., Nano-Optoelectronics Research and Technology Laboratory, School of Physics, University Sains Malaysia, USMPenang 11800, Malaysia; Hassan, Z., Nano-Optoelectronics Research and Technology Laboratory, School of Physics, University Sains Malaysia, USMPenang 11800, Malaysia; Bououdina, M., Nanotechnology Centre, University of Bahrain, PO Box 32038, Bahrain, Department of Physics, College of Science, University of Bahrain, PO Box 32038, Bahrain; Almessiere, M.A., Department of Physics, College of Science, Imam Abdulrahman Bin Faisal University, P.O. Box 1982, Dammam, 31441, Saudi Arabia
Publication Date: 2018
This paper presents the investigation of the influence of the ammoniating time of GaN nanowires (NWs) on the crystalline structure, surface morphology, and optical characteristics. Morphological analysis indicates the growth of good quality and high density of NWs with diameters around 50 nm and lengths up to tens of microns after ammoniating for 30 min. Structural analysis shows that GaN NWs have a typical hexagonal wurtzite crystal structure. Raman spectroscopy confirms the formation of GaN compound with the presence of compressive stress. Photoluminescence (PL) measurements revealed two band emissions, an UV and a broad visible emission. Hydrogen sensor was subsequently fabricated by depositing Pt Schottky contact onto GaN NWs film. The sensor response was measured at various H2 concentrations ranged from 200 up to 1200 ppm at room temperature. It was found that the response increases significantly for low H2 concentration (200–300 ppm) to reach about 50% then increases smoothly to reach 60% at 1200 ppm. The as-fabricated sensor possesses higher performances as compared to similar devices reported in the literature. © 2018 Elsevier Ltd
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