Authors: Hamrouni R., Segmane N.E.H., Abdelkader D., Amara A., Drici A., Bououdina M., Akkari F.C., Khemiri N., Bechiri L., Kanzari M., Bernède J.C.
Author Affiliations: Hamrouni, R., LEREC, Département de physique, Université Badji Mokhtar d’Annaba, BP 12, Annaba, 23000, Algeria; Segmane, N.E.H., LEREC, Département de physique, Université Badji Mokhtar d’Annaba, BP 12, Annaba, 23000, Algeria; Abdelkader, D., Laboratoire de Photovoltaïque et Matériaux Semi-conducteurs-ENIT, Université Tunis ElManar, BP37, Lebelvédère, Tunis, 1002, Tunisia; Amara, A., LEREC, Département de physique, Université Badji Mokhtar d’Annaba, BP 12, Annaba, 23000, Algeria; Drici, A., LEREC, Département de physique, Université Badji Mokhtar d’Annaba, BP 12, Annaba, 23000, Algeria; Bououdina, M., Nanothechnology centre, University of Bahrain, PO Box 32038, Zallaq, Bahrain; Akkari, F.C., Laboratoire de Photovoltaïque et Matériaux Semi-conducteurs-ENIT, Université Tunis ElManar, BP37, Lebelvédère, Tunis, 1002, Tunisia; Khemiri, N., Laboratoire de Photovoltaïque et Matériaux Semi-conducteurs-ENIT, Université Tunis ElManar, BP37, Lebelvédère, Tunis, 1002, Tunisia; Bechiri, L., LESIMS, Département de Physique, Faculté des Sciences, Université Badji Mokhtar - Annaba, BP. 12, Sidi Amar, 23200, Algeria; Kanzari, M., Laboratoire de Photovoltaïque et Matériaux Semi-conducteurs-ENIT, Université Tunis ElManar, BP37, Lebelvédère, Tunis, 1002, Tunisia; Bernède, J.C., LAMP, Université de Nantes, 2 Rue de Hossinnière, BP 92208, Nantes Cedex 3, 44322, France
Publication Date: 2018
Sb2Se3 powder is achieved by mechanical milling of Sb and Se elements. X-ray diffraction analysis indicated the formation of Sb2Se3 orthorhombic phase. The latter finding is confirmed by both X-ray photoelectron spectroscopy characterization and Raman spectroscopy. Magnetic measurement revealed the ferromagnetic character of Sb2Se3 powder. Thin films were obtained by thermal deposition using Sb2Se3 powder as a precursor. Optical measurements carried out on thin films showed a high absorption coefficient and a direct band gap of 1.61 eV. The material has then potential application in photovoltaic conversion. Thin film refractive index dispersion (n) obeys Cauchy dispersion equation. n is investigated and found to comply with Wemple–DiDomenico single oscillator dispersion model. The energy E0 of the oscillator and Ed dispersion energy are derived from the refractive index investigation. Spitzer–Fan model exploitation was allowed to derive the high-frequency dielectric constant ε∞ and the carrier density N/m* ratio. Additionally, Verdet constant V is determined based on the refractive index dispersion study. Furthermore, the nonlinear susceptibility χ(3) as well as nonlinear refractive index are determined for Sb2Se3 thin films. The nanostructure of the material is likely responsible not only for the high nonlinear characteristics but also for the low magnetic character in Sb2Se3. © 2018, Springer-Verlag GmbH Germany, part of Springer Nature.
Eshan2020-11-28T18:53:53+00:00
